<^.mi-(2onditctoi lpioducti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rfp4n100, RF1S4N100SM 4.3a, 1000v, 3.500 ohm, high voltage, n-channel power mosfets the rfp4n100 and rfp4n100sm are n-channel enhancement mode silicon gate power field effect transistors. they are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. this type can be operated directly from an integrated circuit. ordering information features ? 4.3a, 1000v ? rds(on) = 3.500q ? uis rating curve (single pulse) ? -55c to 150c operating temperature symbol q d part number rfp4n100 RF1S4N100SM package to-220ab to-263ab brand rfp4n100 f1s4n100 g a note: when ordering, use the entire part number. 6 s packaging jedec to-220ab jedec to-263ab drain (flange) source drain ,. - .-"?*'?, gate x* gate source drain "(flange) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
rfp4n100, RF1S4N100SM absolute maximum ratings tc = 25c, unless otherwise specified drain to source breakdown voltage (note 1 ) drain to gate voltage (rqs = 20ki) (note 1) continuous drain current . .... pulsed drain current (note 3) gate to source voltage single pulse avalanche rating maximum power dissipation . . linear derating factor operating and storage temperature maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s package body for 1 0s see techbrief 334 . rfp4n100, RF1S4N100SM vqs 1000 vnfir 1000 id 4.3 iom 17 vr<; +20 eas (see uis soa curve) (figures 4, 14,15) pd 150 1.2 ? ? ? tj. tstg ~55 to 1 50 tl 300 t_,._ ?fin caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is a stress only rating at device at these or any other conditions above those indicated in the operational sections of this specification is rot implied. units v v a a v mj w w/c c c c id operation of the note: = 25cto125c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage gate threshold voltage zero gate voltage drain current gate to source leakage current drain to source on resistance (note 2) turn-on delay time rise time turn-off delay time fall time total gate charge (gate to source + gate to drain) thermal resistance junction to case thermal resistance junction to ambient symbol bvdss vgs(th) idss igss rds(on) *d(on) tf |
